1/f noise of continuous-wave semiconductor lasers

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1/f noise of continuous-wave semiconductor lasers

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© The Institution of Electrical Engineers
Published

Using linearised rate equations, the intensity fluctuations in the output of c.w. d.h. GaAlAs-diode lasers have been calculated in the low-frequency range, where the flicker noise dominates. The theoretical results are compared with the optical-intensity fluctuations, which are obtained experimentally. Our measurements indicate that 1/f noise in lasers is mainly caused by 1/f noise from carrier transport in the bulk material and the contacts.

Inspec keywords: aluminium compounds; III-V semiconductors; semiconductor junction lasers; random noise; gallium arsenide

Other keywords: 1/f noise; GaAlAs diode lasers; intensity fluctuations; continuous wave semiconductor lasers; flicker noise; linearised rate equations; DH lasers

Subjects: Semiconductor lasers; Lasing action in semiconductors

References

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