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Change of some properties of junction field-effect transistors after ionising irradiation

Change of some properties of junction field-effect transistors after ionising irradiation

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  • Author(s): G. Dehmel 1  and  D. Bräunig 2
    • View affiliations
    • Affiliations: 1: Institut für Nachrichtentechnik, Technische Universität Braunschweig, Braunschweig, West Germany
      2: Institut für Nachrichtentechnik, Hahn-Meitner-Institut für Kernforschung, Berlin, West Germany
  • Source: Volume 13, Issue 20, 29 September 1977, p. 601 – 603
    DOI:  10.1049/el:19770432 , Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Electrical Engineers
Published

Measurements of the increase of equivalent noise-voltage spectral densities and gate leakage currents of the j.f.e.t.s 2N5521 and 2N6483 after ionising irradiation are reported. After an absorbed dose of 107 rad (Si), the noise and gate current are increased by factors of up to 10 and 500, respectively.

Inspec keywords: electron device noise; junction gate field effect transistors; leakage currents; gamma-ray effects

Other keywords: equivalent noise voltage spectral density; JFET; gate leakage currents; ionising irradiation; junction field effect transistor

Subjects: Other field effect devices

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