© The Institution of Electrical Engineers
A single-flux-quantum random-access memory cell for nondestructive read-out and write has been designed and successfully simulated. The binary information is stored in an interferometer with two unequal Josephson junctions. No bias current is needed to store the information. Reasonable operation margins are obtained.
References
-
-
1)
-
H.H. Zappe
.
A single flux quantum Josephson junction memory cell.
Appl. Phys. Lett.
,
7
-
2)
-
P. Wolf
.
(1977)
, Die anwendung des josephson-effekts bei der digitalen speicherung.
-
3)
-
Guéret, P., Mohr, Th.O., Wolf, P.: `Single flux-quantum memory cells', Applied superconductivity conference, 1976, Palo Alto, Calif..
-
4)
-
H. Beha
.
Asymmetric 2-Josephson-junction interferometer as a logic gate.
Electron. Lett.
,
216 -
218
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