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Modelling the 3rd-order intermodulation-distortion properties of a GaAs f.e.t.

Modelling the 3rd-order intermodulation-distortion properties of a GaAs f.e.t.

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A simple analytical model of the 3rd-order intermodulation-distortion properties of a GaAs field-effect transistor is proposed. The model takes into account the distortion-producing nonlinearities of the Schottky-bairier junction, the trans-conductance and the drain conductance. Parameters of the model are presented for a GaAs f.e.t. of 0.5 μm gate length, and the model-predicted distortion characteristics are compared with measured data.

References

    1. 1)
      • A.M. Khadr , R.H. Johnston . Distortion in high frequency FET amplifiers. IEEE J. Solid State Circuits , 180 - 189
    2. 2)
      • C. Rauscher , R.S. Tucker . , A method for measuring intermodulation distortion in GaAs FETs.
    3. 3)
      • G.L. Heiter . Characterization of nonlinearities in microwave devices and systems. IEEE Trans. , 797 - 805
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