Contact-degradation studies on GaAs transferred-electron devices using a focused backscattering technique

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Contact-degradation studies on GaAs transferred-electron devices using a focused backscattering technique

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© The Institution of Electrical Engineers
Published

Focused backscattering microanalysis has been used to overcome some of the problems associated with conventional backscattering. The small beam size enables the study of (a) small areas typical of real microwave devices, (b) lateral variations of the contact interdiffusion and (c) deep profiles when used in conjunction with angle lapped samples.

Inspec keywords: metallisation; particle backscattering; solid-state microwave devices; Gunn devices; III-V semiconductors; ohmic contacts

Other keywords: Gunn devices; contact interdiffusion; focused backscattering technique; deep profiles; GaAs transferred electron devices; angle lapped samples; contact degradation

Subjects: Metallisation and interconnection technology; Semiconductor-metal interfaces; Bulk effect devices; II-VI and III-V semiconductors

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