Contact-degradation studies on GaAs transferred-electron devices using a focused backscattering technique

Contact-degradation studies on GaAs transferred-electron devices using a focused backscattering technique

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Focused backscattering microanalysis has been used to overcome some of the problems associated with conventional backscattering. The small beam size enables the study of (a) small areas typical of real microwave devices, (b) lateral variations of the contact interdiffusion and (c) deep profiles when used in conjunction with angle lapped samples.


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