http://iet.metastore.ingenta.com
1887

Contact-degradation studies on GaAs transferred-electron devices using a focused backscattering technique

Contact-degradation studies on GaAs transferred-electron devices using a focused backscattering technique

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Focused backscattering microanalysis has been used to overcome some of the problems associated with conventional backscattering. The small beam size enables the study of (a) small areas typical of real microwave devices, (b) lateral variations of the contact interdiffusion and (c) deep profiles when used in conjunction with angle lapped samples.

References

    1. 1)
      • Palmström, C.J., Morgan, D.V., Howes, M.J.: `Contact degradation of GaAs transferred electron devices', Proceedings of 3rd international conference on ion beam analysis, 1977.
    2. 2)
      • G.Y. Robinson . Metallurgical and electrical properties of alloyed Ni/Au-Ge films on n-type GaAs. Solid-State Electron. , 331 - 342
    3. 3)
      • J.A. Cookson , F.D. Pilling . The use of focussed ion beams for analysis. Thin solid films , 381 - 385
    4. 4)
      • D.K. Brice . Theoretical analysis of the energy spectra of back-scattered ions. Thin solid films , 121 - 135
    5. 5)
      • J. Gyulai , J.W. Mayer , V. Rodriguez , A.Y.C. Yu , H.J. Gopen . Alloying behaviour of Au and Au-Ge on GaAs. J. Appl. Phys. , 3578 - 3585
    6. 6)
      • N. Yokoyama , S. Ohkawa , H. Ishikawa . Effects of the heating rate in alloying of Au-Ge to n-type GaAs on the ohmic properties. Japan J. Appl. Phys. , 1071 - 1072
    7. 7)
      • J.C. Whitton . Removal of thin (20A) layers of metals, metal oxides and ceramics by mechanical polishing. J. Appl. Phys. , 3917 - 3922
    8. 8)
      • B.K. Ridley . Specific negative resistance in solids. Proc. Phys. Soc. , 954 - 966
    9. 9)
      • T.F. Gibbons , W.E. Beadl . Switching properties of thin NiO films. Solid-State Electron. , 785 - 797
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19770368
Loading

Related content

content/journals/10.1049/el_19770368
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address