Measurements of the electron accumulation on two Schottky diodes connected metal to metal

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Measurements of the electron accumulation on two Schottky diodes connected metal to metal

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© The Institution of Electrical Engineers
Published

Electron accumulation on the metal sides of two Schottky diodes connected metal to metal was observed as a result of the temporary variation of bias between the semiconductor sides of both diodes. The potential of the metals was found to be predictable by a theory based on a property of the Schottky diode.

Inspec keywords: Schottky-barrier diodes

Other keywords: Schottky diodes connected metal to metal; Schottky diode theory; metal potentials; electron accumulation

Subjects: Semiconductor-metal interfaces; Junction and barrier diodes

References

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      • N. Hashizume , S. Kataoka . Integration of GaAs m.e.s.f.e.t.s and Gunn elements In a 4 bit-gate device. Electron. Lett. , 370 - 372
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