GaAs f.e.t.s with graded channel doping profiles

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GaAs f.e.t.s with graded channel doping profiles

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© The Institution of Electrical Engineers
Published

Graded-channel GaAs f.e.t.s with the carrier concentration decreasing from the substrate–epitaxial interface outwards are observed to exhibit more linear d.c. transfer characteristics, higher reverse gate breakdown voltages and lower 3rd-order intermodulation products than f.e.t.s fabricated from companion slices with uniform or flat doping profiles.

Inspec keywords: vapour phase epitaxial growth; semiconductor doping; gallium arsenide; field effect transistors

Other keywords: fabrication; higher reverse gate breakdown voltages; reduced third order intermodulation products; graded channel doping profiles; linearised DC transfer characteristics; GaAs FETs

Subjects: Epitaxial growth; Other field effect devices; Semiconductor doping

References

    1. 1)
      • H.M. Macksey , R.L. Adams , D.N. Mcquiddy , D.W. Shaw , W.R. Wissman . Dependence of GaAs power MESFET microwave performance on device and material parameters. IEEE Trans. , 113 - 122
    2. 2)
      • S.M. Sze . (1969) , Physics of semiconductor devices.
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