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New v-groove integrated injection logic

New v-groove integrated injection logic

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A new V-groove integrated injection logic (v.i.i.l.) is proposed which combines the V-groove technology and the double-diffused bipolar technology. The fabrication processes arc qualitatively described. The lateral p–n–p transistor of the i.i.l. is located on the vertical V-shape surface, and the effective base width is controlled by the combination of the vertical diffusion process and the V-groove etching rate. A 1-dimensional analysis is used and an approximate expression for the collector current of the lateral p–n–p transistor is given. The v.i.i.l. is expected to have a higher production yield than that of the ordinary i.i.l.

References

    1. 1)
      • N.C. de Troye . Integrated injection logic—present and future. IEEE J. Solid-State Circuits
    2. 2)
      • S.Y. Yu , G. Thomas . The effect of current suppression in the pn−n+ diode of 12L. Solid-State Electron.
    3. 3)
      • D.B. Lee . Anisotropic etching of silicon. J. Appl. Phys.
    4. 4)
      • F.M. Klaassen . Device physics of 12L. IEEE Trans.
    5. 5)
      • S.Y. Yu , P. Ouyang . A new V-groove double-diffused m.o.s. (v.d.m.o.s.). Electron. Lett.
    6. 6)
      • E.A. Torrero . Solid state devices. IEEE Spectrum
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