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Implanation de sélénium dans le Ga1−xAlxAs (Implanation of selenium into Ga1−xAlxAs

Implanation de sélénium dans le Ga1−xAlxAs (Implanation of selenium into Ga1−xAlxAs

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Par implantation d'ions de sélénium, de fines couches de type n sont obtenues dans le Ga0.71 Al0.29As. Pour les faibles doses, I'activité électrique est proche de 100%, et I'effet de l'implantation est comparable pour le GaAs et le Ga1−x Alx As. Les mêmes resultats sont obtenus en utilisant du Si3N4 ou de l'AIN comme film de protection.By implantation of selenium ions, thin n-type layers are obtained in Ga0.71Al0.29As. For small doses, the electrical activity is close to 100%. and the effect of the implantation is comparable for GaAs and Ga1−x AlxAs. The same results are obtained when using Si3N4 or AlN as a protective film.

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