Series-connected GaAs and Si IMPATT-diode chips: some new results

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Series-connected GaAs and Si IMPATT-diode chips: some new results

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© The Institution of Electrical Engineers
Published

Gallium-arsenide Schottky low–high–low IMPATT-diode chips have been successfully combined in series. A maximum c.w. power output of 22.5 W has been repeatedly obtained in X-band by using six 4-W 0.2-mm-diameter mesa GaAs devices. After careful preselection of GaAs chips (yield ≃ 20%), the GaAs devices combined more readily than did silicon p+–n–n+ impatt chips.

Inspec keywords: gallium arsenide; IMPATT diodes

Other keywords: six mesa operation; mesa GaAs devices; series connected IMPATT diode chips; Si IMPATT diode chips; GaAs IMPATT diode chips; X-band; 22.5 W CW power output

Subjects: Solid-state microwave circuits and devices; Junction and barrier diodes

References

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      • M.E. Hines . Large-signal noise, frequency conversion, parametric instabilities in IMPATT diode networks. Proc. IEEE , 1534 - 1548
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      • W.E. Schroeder . Spurious parametric oscillations in IMPATT diode circuits. Bell Syst. Tech. J. , 1187 - 1210
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      • R.A. Giblin , E.F. Scherer , R.L. Wierich . Computer simulation of instability noise in high-power avalanche devices. IEEE Trans. , 404 - 418
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      • K. Kurokawa . The single-cavity multiple-device oscillator. IEEE Trans. , 793 - 801
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      • G.S. Hobson , R.C. Tozer . Spurious oscillations in impatt oscillators. Electron. Lett.
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      • C.S. Brackett . The elimination of tuning-induced burnout and bias-circuit oscillations in IMPATT oscillators. Bell Syst. Tech. J. , 271 - 305
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