Liquid-nitrogen-cooled submillimetre-wave silicon IMPATT diodes

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Liquid-nitrogen-cooled submillimetre-wave silicon IMPATT diodes

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© The Institution of Electrical Engineers
Published

400 and 300 GHz c.w. oscillation characteristics for liquid-nitrogcn-cooled silicon IMPATT diodes are described. Output powers of 2.2 and 4.5 mW have been obtained at 412 and 295 GHz, respectively, and a highest oscillation frequency of 430 GHz observed.

Inspec keywords: IMPATT diodes

Other keywords: CW oscillation; 400 GHz; submillimetre wave Si IMPATT diode; 300 GHz; liquid N2 cooled

Subjects: Solid-state microwave circuits and devices; Junction and barrier diodes

References

    1. 1)
      • T. Misawa . High-frequency fall-off of IMPATT diode efficiency. Solid-State Electron. , 457 - 465
    2. 2)
      • M. Ino , T. Ishibashi , M. Ohmori . CW oscillation with p+-p-n+ silicon impatt diodes in 200 and 300 GHz bands. Electron. Lett.
    3. 3)
      • T. Ishibashi , M. Ohmori . 200 GHz 50-mW CW oscillation with silicon SDR IMPATT diodes. IEEE Trans. , 858 - 859
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