Modulation characteristics of double-heterostructure superluminescent diodes
High-speed double-heterostructure GaAs superluminescent diodes have been fabricated. Risetimes of 2 ns at optical linewidths of 10 nm have been achieved.
For access to this article, please select a purchase option:
IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.
Your recommendation has been sent to your librarian.
High-speed double-heterostructure GaAs superluminescent diodes have been fabricated. Risetimes of 2 ns at optical linewidths of 10 nm have been achieved.
Inspec keywords: optical modulation; optical communication equipment; light emitting diodes
Other keywords:
Subjects: Light emitting diodes; Optical communication devices, equipment and systems; Optical communication
All contents © The Institution of Engineering and Technology 2024