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Figure of merit for avalanche photodiodes

Figure of merit for avalanche photodiodes

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With regard to optimum signal/noise ratio at an optical receiver output, a figure of merit for an avalanche photodiode is proposed of the form η/√κ, where n is the quantum efficiency and k is the ratio of the hole ionisation coefficient β to that of an electron, α. An optimum avalanche-region width is estimated by using the figure of merit for a silicon avalanche photodiode at a given breakdown voltage.

References

    1. 1)
      • H. Kanbe , T. Kimura , Y. Mizushima , K. Kajiyama . Silicon avalanche photodiodes with low multiplication noise and high-speed response. IEEE Trans. , 1337 - 1343
    2. 2)
      • Siegman, A.E., Harris, S.E.: `Optical heterodyning and optical demodulation at microwave frequencies', Proceedings of symposium on optical masers, 1963, Polytechnic Press, p. 511–527.
    3. 3)
      • R.J. Mcintyre . Multiplication noise in uniform avalanche diodes. IEEE Trans. , 164 - 168
    4. 4)
      • T. Kaneda , H. Matsumoto , T. Yamaoka . A model for reachthrough avalanche photodiodes (RAPD's). J. Appl. Phys. , 3135 - 3139
    5. 5)
      • H. Kanbe , T. Kimura , Y. Mizushima . Wavelength-dependence of multiplication noise in silicon avalanche photodiodes. IEEE Trans.
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