Active layers for device applications by using high-energy selenium implantation into GaAs

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Active layers for device applications by using high-energy selenium implantation into GaAs

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© The Institution of Electrical Engineers
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High-energy, doubly charged selenium ions have been used to produce dopant profiles suitable for GaAs devices, such as f.e.t.s. Selenium has the advantage that beams of high purity may be formed.

Inspec keywords: field effect transistors; gallium arsenide; semiconductor doping; ion implantation; III-V semiconductors

Other keywords: dopant profiles; high energy Se implantation; FET; Se++ ions; GaAs; doubly charged ions

Subjects: II-VI and III-V semiconductors; Doping and implantation of impurities; Semiconductor doping; Other field effect devices

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