© The Institution of Electrical Engineers
A technique for investigating the rôle of dynamic or effective leakage current in the r.f. performance of an impatt diode is described. The technique involves the design of a device structure and microwave cavity which permits the leakage current to be varied externally by photogeneration of carriers, and is compatible with c.w. operation. Typical results for flat-profile single-drift X-band silicon are a 10% reduction in power and a 10 MHz increase in frequency at a photo/bias-current ration of 0.005.
References
-
-
1)
-
P.E. Cottrell ,
J.M. Borrego ,
R.J. Gutmann
.
IMPATT oscillators with enhanced leakage current.
Solid-State Electron.
,
1 -
12
-
2)
-
I.S. Groves ,
D.E. Lewis
.
Resonant-cap structures for IMPATT diodes.
Electron. Lett.
,
98 -
99
-
3)
-
R.L. Kuvås
.
Nonlinear noise theory for IMPATT diodes.
IEEE Trans.
,
395 -
411
-
4)
-
T. Misawa
.
Saturation current and large-signal operation of a Readdiode.
Solid-State Electron.
,
1363 -
1378
-
5)
-
R.A. Zettler ,
A.M. Cowley
.
Batch fabrication of integral-heat sink impatt diodes.
Electron. Lett.
,
693 -
694
-
6)
-
J.M. Borrego ,
R.J. Gutmann ,
P.E. Cottrell ,
S.K. Ghandhi
.
Transient ionizing radiation effects on IMPATT diode oscillators.
IEEE Trans.
,
328 -
334
-
7)
-
T. Misawa
.
Minority carrier storage and oscillation efficiency in Read diodes.
Solid-State Electron.
,
1369 -
1374
-
8)
-
W.E. Schroerder ,
G.I. Hadda
.
Nonlinear properties of IMPATT devices.
Proc. IEEE
,
153 -
182
-
9)
-
A. Sanderson ,
A. Jordan
.
Electron beam control of IMPATT diodes.
Solid-State Electron.
,
140 -
141
-
10)
-
D.R. Decker ,
C.N. Dunn ,
H.B. Frost
.
The effect of injecting contacts on avalanche diode performance.
IEEE Trans.
,
141 -
146
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19770139
Related content
content/journals/10.1049/el_19770139
pub_keyword,iet_inspecKeyword,pub_concept
6
6