Performance of GaAs m.e.s.f.e.t. oscillators in the frequency range 8–25 GHz

Performance of GaAs m.e.s.f.e.t. oscillators in the frequency range 8–25 GHz

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Performance results of microstrip GaAs m.e.s.f.e.t. oscillators operating in the frequency range 8–25 GHz are reported. It is shown that output powers as high as 500 mW and efficiencies as high as 45% can be achieved.


    1. 1)
      • M. Maeda . Design and performance of X-band oscillators with GaAs Schottky-gate field-effect transistors. IEEE Trans. , 661 - 667
    2. 2)
      • R.A. Pucel . Experiments on integrated gallium-arsende f.e.t. oscillators at X-band. Electron. Lett. , 219 - 220
    3. 3)
      • M. Omori , C. Nishimoto . Common-gate GaAs f.e.t. oscillator. Electron. Lett. , 369 - 371
    4. 4)
      • N.A. Slaymaker , J.A. Turner . Alumina microstrip GaAs f.e.t. 11 GHz oscillator. Electron. Lett. , 300 - 301
    5. 5)
      • H. Abe . (1976) A high-power microwave GaAs f.e.t. oscillator, ISSCC Digest of Technical Papers.
    6. 6)
      • H.M. Macksey . GaAs power f.e.t.s with electron-beam-defined gates. IEEE J. Solid-State Circuits

Related content

This is a required field
Please enter a valid email address