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Low-frequency stability of impatt-diode circuits

Low-frequency stability of impatt-diode circuits

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© The Institution of Electrical Engineers
Published

The maximum available stability of an impatt-diode circuit depends on the parasitic capacitance measured at the diode terminals. A formula is given relating the microwave characteristics of the circuit to the maximum parasitic capacitance compatible with freedom from spurious oscillation.

Inspec keywords: solid-state microwave circuits; circuit oscillations; IMPATT diodes; microwave amplifiers; microwave oscillators; frequency stability

Other keywords: parasitic capacitance; spurious oscillation; IMPATT diode circuits; low frequency stability; microwave characteristics

Subjects: Solid-state microwave circuits and devices; Junction and barrier diodes

References

    1. 1)
      • H.W. Bode . (1945) , Network analysis and feedback amplifier design.
    2. 2)
      • M.G. Reggiani . Low-frequency stability margin in impatt-diode circuits. Electron. Lett. , 234 - 235
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