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Enhancement-mode GaAs m.o.s.f.e.t. on semi-insulating substrate using a self-aligned gate technique

Enhancement-mode GaAs m.o.s.f.e.t. on semi-insulating substrate using a self-aligned gate technique

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A self-aligned gate notched channel GaAs m.o.s.f.e.t. structure on semi-insulating substrate is presented. Device operation is mainly in enhancement mode. The transconductance is comparable to enhancement-mode m.e.s.f.e.t.s, j.f.e.t.s and s.i.g.f.e.t.s; however, the output-current capability is essentially increased.

References

    1. 1)
      • H. Becke , R. Hall , J. White . Gallium arsenide MOS transistors. Solid-Stale Electron. , 813 - 823
    2. 2)
      • D.L. Lile , A.R. Clawson , D.A. Collins . Depletion-mode GaAs MOSFET. Appl. Phys. Lett. , 207 - 208
    3. 3)
      • E. Kohn . GaAs-MeSFET for digital application. Solid-State Electron. , 29 - 33
    4. 4)
      • V.W. Vodicka , R. Zuleeg . (1975) Ion implanted GaAs enhancement mode JFETs, IEDM.
    5. 5)
      • H.M. Macksay , D.W. Shaw , W.R. Wisseman . GaAs power f.e.t.s with semi-insulated gates. Electron. Lett. , 192 - 193
    6. 6)
      • H. Hasegawa , H.L. Hartnagel . Anodic oxidation of GaAs in mixed solutions of glycol and water. J. Electrochem. Soc. , 713 - 723
    7. 7)
      • A. Colquhoun , H.L. Hartnagel . Studies of n-type GaAs material properties by anodic current behaviour. Solid-State Electron. , 819 - 826
    8. 8)
      • Weiss, B., Kohn, E., Bayraktaroglu, B., Hartnagel, H.L.: `Native oxides on GaAs for MOSFETs—annealing effects and inversion-layer mobilities', Paper 5.4, 6th international symposium on GaAs and related compounds, 1976, Edinburgh, UK, (IoP Conf. Series 33a).
    9. 9)
      • S.R. Hofstein . An analysis of deep depletion thin-film MOS transistors. IEEE Trans. , 846 - 855
    10. 10)
      • Kohn, E., Bayraktaroglu, B., Hartnagel, H.L.: `Characterization of anodic GaAs oxide for MOS applications', Paper A.2.5, 6th ESSDERC, 1976, München, W. Germany.
    11. 11)
      • Fritsche, D., Weimann, G., Schlapp, W., Dinges, H.D.: `Unter-suchungen an GaAs-MOS-Varaktoren', Paper HL 38, Spring meeting of the German Phys. Society, 1976, Freudenstadt, W. Germany.
    12. 12)
      • T. Sawada , H. Hasegawa . Anomalous frequency dispersion of m.o.s. capacitors formed on n-type GaAs. Electron. Lett. , 471 - 472
    13. 13)
      • B. Bayraktaroglu , S. Hannah , H.L. Hartnagel . Stable charge storage of m.a.o.s. diodes on GaAs by new anodic oxidation. Electron. Lett. , 45 - 46
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