Gunn-effect memory device using the charge accumulation on a Schottky-trigger electrode

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Gunn-effect memory device using the charge accumulation on a Schottky-trigger electrode

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© The Institution of Electrical Engineers
Published

A new Gunn-effect memory device using the charge accumulation on a Schottky-trigger electrode is proposed and its operation demonstrated with a monolithically fabricated device. Theoretical calculations show that the device could be modified into a static memory device if the Schottky electrode potential is chosen as the output.

Inspec keywords: Gunn devices; semiconductor storage devices

Other keywords: Schottky trigger electrode; charge accumulation; monolithically fabricated device; Gunn effect memory device

Subjects: Bulk effect devices; Semiconductor storage

References

    1. 1)
      • T. Sugeta , H. Yanai . Logic and memory applications of the Schottky–gate Gunn effect digital device. Proc. IEEE , 238 - 240
    2. 2)
      • H. Thim . Experimental verification of bistable switching with Gunn diodes. Electron. Lett. , 246 - 247
    3. 3)
      • H. Imada , M. Morisue , T. Sumi . Computer simulation of a memory device using a Gunn effect diode. Proc. IEEE , 761 - 762
    4. 4)
      • N. Hashizume , S. Kodato . Condition for no charge accumulation on a metal of a Schottky–Schottky connection in a system of Gunn devices. IEEE Trans.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19770042
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