© The Institution of Electrical Engineers
A new method for fabricating thick-oxide m.n.o.s. memory structures is proposed. On an SiO2 layer, about 50 Å thick W is deposited and removed by etching. It is assumed that W creates a level (or band) in the SiO2 band gap which greatly enhances the SiO2 conductance, resulting in improved charge-storage capability.
References
-
-
1)
-
D. Kahng ,
W.T. Sundburg ,
D.M. Boulin ,
J.R. Ligenza
.
Interfacial depants for dual-dielectric, charge-storage cells.
Bell Syst. Tech. J.
,
1723 -
1739
-
2)
-
L.I. Popova ,
V.J. Shekerdjiiski ,
V.B. Lasarova ,
G.D. Beshkov ,
P.K. Vitanov
.
Preparation and properties of silicon nitride films deposited from the SiCl4-NH3 system.
Bulg. J. Phys.
,
609 -
615
-
3)
-
P.K. Vitanov ,
R.S. Petrova
.
, Electrical conduction in thermally grown SiO.
-
4)
-
P.K. Vitanov ,
L.I. Popova ,
M.T. Kamenova
.
(1976)
, Method for fabrication of MNOS transistors and MNOS ICs.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19760521
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