M.N.O.S. memory structure with relatively thick oxide

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M.N.O.S. memory structure with relatively thick oxide

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© The Institution of Electrical Engineers
Published

A new method for fabricating thick-oxide m.n.o.s. memory structures is proposed. On an SiO2 layer, about 50 Å thick W is deposited and removed by etching. It is assumed that W creates a level (or band) in the SiO2 band gap which greatly enhances the SiO2 conductance, resulting in improved charge-storage capability.

Inspec keywords: metal-insulator-semiconductor devices; semiconductor storage devices

Other keywords: thick oxide MNOS memory structures; charge storage; fabrication

Subjects: Other field effect devices; Semiconductor storage

References

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      • D. Kahng , W.T. Sundburg , D.M. Boulin , J.R. Ligenza . Interfacial depants for dual-dielectric, charge-storage cells. Bell Syst. Tech. J. , 1723 - 1739
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      • L.I. Popova , V.J. Shekerdjiiski , V.B. Lasarova , G.D. Beshkov , P.K. Vitanov . Preparation and properties of silicon nitride films deposited from the SiCl4-NH3 system. Bulg. J. Phys. , 609 - 615
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      • P.K. Vitanov , R.S. Petrova . , Electrical conduction in thermally grown SiO.
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      • P.K. Vitanov , L.I. Popova , M.T. Kamenova . (1976) , Method for fabrication of MNOS transistors and MNOS ICs.
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