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M.N.O.S. memory structure with relatively thick oxide

M.N.O.S. memory structure with relatively thick oxide

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A new method for fabricating thick-oxide m.n.o.s. memory structures is proposed. On an SiO2 layer, about 50 Å thick W is deposited and removed by etching. It is assumed that W creates a level (or band) in the SiO2 band gap which greatly enhances the SiO2 conductance, resulting in improved charge-storage capability.

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