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The photovoltaic properties of p–n junctions made from 1-pass zone melting polycrystalline silicon rods are presented. This solution is considered as an intermediate step for similar cells, but from semielectronic grade polysilicon material. Efficiencies of up to 5.6% have been obtained, even without antireflection coatings.
Inspec keywords: p-n homojunctions; photovoltaic cells; solar cells
Other keywords:
Subjects: Photoelectric devices; Photoelectric conversion; solar cells and arrays; Solar cells and arrays; Semiconductor junctions