Effects of channelling on the electrical properties of donor implanted GaAs

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Effects of channelling on the electrical properties of donor implanted GaAs

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© The Institution of Electrical Engineers
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We have measured the electrical effects of implanting tin or tellurium ions into GaAs in random and channelling directions. Channelled implants produced higher electrical activities and broader electron concentration profiles than did random direction implants. To avoid channelling, samples should be carefully misaligned from a low-index direction for implant energies of less than about 100 keV, while implantations at higher energies require less stringent control of the implant direction.

Inspec keywords: channelling; III-V semiconductors; gallium arsenide; ion implantation; carrier density

Other keywords: channelling; electrical properties; electron concentration profiles; donor implanted GaAs

Subjects: Channelling, blocking and energy loss of particles; Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators); Electrical conductivity of II-VI and III-V semiconductors; Semiconductor doping; II-VI and III-V semiconductors; Doping and implantation of impurities

References

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      • R.K. Surridge , B.J. Sealy , A.D.E. D'Cruz , K.G. Stephens . (1977) , Annealing kinetics of donor ions implanted into GaAs.
    2. 2)
      • B.J. Sealy , R.K. Surridge , E.C. Bell , A.D.E. D'Cruz . (1976) , Donor activity in ion implanted GaAs.
    3. 3)
      • R.K. Surridge , B.J. Sealy . , Comparison of Sn, Ge, Se and Te ion implanted GaAs.
    4. 4)
      • L.J. van der Pauw . A method of measuring specific resistivity and Hall effect of discs of arbitrary shape. Philips Res. Rep. , 1 - 9
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