http://iet.metastore.ingenta.com
1887

Effects of channelling on the electrical properties of donor implanted GaAs

Effects of channelling on the electrical properties of donor implanted GaAs

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

We have measured the electrical effects of implanting tin or tellurium ions into GaAs in random and channelling directions. Channelled implants produced higher electrical activities and broader electron concentration profiles than did random direction implants. To avoid channelling, samples should be carefully misaligned from a low-index direction for implant energies of less than about 100 keV, while implantations at higher energies require less stringent control of the implant direction.

References

    1. 1)
      • R.K. Surridge , B.J. Sealy , A.D.E. D'Cruz , K.G. Stephens . (1977) , Annealing kinetics of donor ions implanted into GaAs.
    2. 2)
      • B.J. Sealy , R.K. Surridge , E.C. Bell , A.D.E. D'Cruz . (1976) , Donor activity in ion implanted GaAs.
    3. 3)
      • R.K. Surridge , B.J. Sealy . , Comparison of Sn, Ge, Se and Te ion implanted GaAs.
    4. 4)
      • L.J. van der Pauw . A method of measuring specific resistivity and Hall effect of discs of arbitrary shape. Philips Res. Rep. , 1 - 9
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19760509
Loading

Related content

content/journals/10.1049/el_19760509
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address