Novel magnetic-field sensor using carrier-domain rotation: operation and practical performance

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Novel magnetic-field sensor using carrier-domain rotation: operation and practical performance

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© The Institution of Electrical Engineers
Published

A magnetic field applied to a circular p-n-p-n structure causes rotation of a carrier domain, the localised region where bipolar-transistor action occurs. A theoretical explanation is given of device operation, including the dependence of rotation frequency on flux density. Experimental results are given for a prototype device.

Inspec keywords: magnetic field measurement; bipolar transistors; transducers; semiconductor devices

Other keywords: practical performance; transducers; planar structure; carrier domain rotation around circular path; circular p-n-p-n structure; operation; prototype device; semiconductor magnetic field sensor; pulsed output; dependence of rotation frequency on flux density; experimental results

Subjects: Sensing devices and transducers; Electric transducers and sensing devices; Transducers; Magnetic variables measurement; Magnetic instruments and techniques; Measurement of basic electric and magnetic variables; Bipolar transistors

References

    1. 1)
      • B. Gilbert . , Novel magnetic–field sensor using carrier-domain rotation: proposed device design.
    2. 2)
      • B. Gilbert . New planar distributed devices based on a domain principle. IEEE ISSCC Technical Digest
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