Incremental efficiency enhancement and r.f. response of GaAs-GaAlAs double-heterostructure stripe lasers

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Incremental efficiency enhancement and r.f. response of GaAs-GaAlAs double-heterostructure stripe lasers

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© The Institution of Electrical Engineers
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Measurements of the photon-electron resonance frequency ωr on stripe lasers with nonlinear light-output/current characteristics have been made. It is found that ωr2 is not proportional to the steady bias light, as conventional theory states, but is approximately proportional to the current above threshold. A new theory is presented which accounts for the nonlinear light/current characteristics, including incremental efficiency enhancement and the changes of the resonance frequency with current.

Inspec keywords: laser theory; semiconductor junction lasers

Other keywords: RF response; photon electron resonance frequency; GaAs-GaAlAs; incremental efficiency enhancement; nonlinear light/current characteristics; DH; double heterostructive stripe laser

Subjects: Semiconductor lasers; Lasing action in semiconductors

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