Interdiffusion of metallic contact layers on silicon IMPATT diodes

Interdiffusion of metallic contact layers on silicon IMPATT diodes

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A comparative study, using Rutherford backscattering of He ions, of Ag/Pt/Cr and Au/Pt/Cr metallisations on silicon substrates has shown that significant interdiffusion takes place for Ag/Pt/Cr at temperatures around 350°C, resulting in the removal of the platinum barrier layer. No such effect takes place at the same temperature for Au/Pt/Cr. These results are consistent with the observed life-test performance of devices with these metallisations.


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