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Interdiffusion of metallic contact layers on silicon IMPATT diodes

Interdiffusion of metallic contact layers on silicon IMPATT diodes

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A comparative study, using Rutherford backscattering of He ions, of Ag/Pt/Cr and Au/Pt/Cr metallisations on silicon substrates has shown that significant interdiffusion takes place for Ag/Pt/Cr at temperatures around 350°C, resulting in the removal of the platinum barrier layer. No such effect takes place at the same temperature for Au/Pt/Cr. These results are consistent with the observed life-test performance of devices with these metallisations.

References

    1. 1)
      • `Engineering evaluation—life tests on IMPATT diodes', 3, Report, 1973.
    2. 2)
      • Staeker, P.: `Ka-band IMPATT diode reliability', Proceedings of IEEE international electron devices meeting, 1973, .
    3. 3)
      • Brook, P., Smith, J.G., Taylor, D.J.: `Improved heat-sink structures for millimetre-wave IMPATT diodes', P311, Proceedings of Cornell conference on microwave semiconductor devices, circuits and applications, 1973, .
    4. 4)
      • J.W. Mayer , J.F. Zeigler . Ion beam surface analysis. Thin Solid Films , 1 - 463
    5. 5)
      • J. Zeigler . (1975) , New uses of ion accelerators.
    6. 6)
      • D.V. Morgan . Rutherford scattering analysis: a new tool for semiconductor device technology. Solid-State Electron Devices
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