RT Journal Article
A1 R.J. Bennett
A1 K.A. Thoma

PB iet
T1 Determination of an initial mesh for computer simulation of semiconductor devices with nearly abrupt junctions
JN Electronics Letters
VO 12
IS 19
SP 505
OP 506
AB A computer procedure to determine the initial potential distribution in the vicinity of semiconductor junction structures is outlined. It is useful for either n+−n or p−n structures and has the advantage that the mesh spacing is generated in such a way that its use for modelling under nonequilibrium conditions satisfies the stability requirements outlined by Seidman and Choo.
K1 nearly abrupt junctions
K1 initial potential distribution
K1 semiconductor devices
K1 n+-n structures
K1 initial mesh
K1 p-n structures
K1 computer simulation
K1 modelling
DO https://doi.org/10.1049/el:19760383
UL https://digital-library.theiet.org/;jsessionid=2v0nxh1jpevad.x-iet-live-01content/journals/10.1049/el_19760383
LA English
SN 0013-5194
YR 1976
OL EN