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Dislocation-limited minority-carrier lifetime in n-type GaP

Dislocation-limited minority-carrier lifetime in n-type GaP

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Minority hole lifetimes as high as 2.5 μs have been reproducibly obtained in epitaxial GaP layers grown by an isothermal liquid-phase technique. In this material, the measured lifetimes are shown to be controlled by the dislocation density ρD in the samples when ρD > 5 × 104 cm−2. A theory is presented which shows that, when the lifetime is dislocation limited, its value is close to a minimum possible value for recombination at the dislocation cores.

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