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7.9–8.4 GHz GaAs m.e.s.f.e.t. amplifier

7.9–8.4 GHz GaAs m.e.s.f.e.t. amplifier

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A 4-stage balanced GaAs m.e.s.f.e.t. amplifier has been developed for the 7.9–8.4 GHz satellite-communication frequency band. Linear gain of 26±0.5dB and 150 mW power at 1 dB compression were obtained across the design band. The small-signal gain, phase linearity, group delay and noise figure are described as a function of frequency. Large-signal gain saturation, 3rd-order intermodulation distortion, gain and phase against temperature and a.m.-to-p.m. conversion data are also presented.

References

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      • I. Drukier , R.L. Camisa , S.T. Jolly , H.C. Huang , S.Y. Narayan . Medium-power GaAs f.e.t.. Electron. Lett. , 104 - 105
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      • Drukier, I.: `Medium power J-band MESFETs', Conference on active semiconductor devices for microwaves and integrated optics, 1975, Cornell University, .
    3. 3)
      • R.L. Camisa . GaAs MESFET linear amplifiers. ISSCC Digest of Technical Papers , 70 - 71
    4. 4)
      • R.L. Camisa , J. Goel , I. Druckier . GaAs m.e.s.f.e.t. linear power amplifier stage giving I W. Electron. Lett. , 572 - 573
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