7.9–8.4 GHz GaAs m.e.s.f.e.t. amplifier

7.9–8.4 GHz GaAs m.e.s.f.e.t. amplifier

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A 4-stage balanced GaAs m.e.s.f.e.t. amplifier has been developed for the 7.9–8.4 GHz satellite-communication frequency band. Linear gain of 26±0.5dB and 150 mW power at 1 dB compression were obtained across the design band. The small-signal gain, phase linearity, group delay and noise figure are described as a function of frequency. Large-signal gain saturation, 3rd-order intermodulation distortion, gain and phase against temperature and a.m.-to-p.m. conversion data are also presented.


    1. 1)
      • I. Drukier , R.L. Camisa , S.T. Jolly , H.C. Huang , S.Y. Narayan . Medium-power GaAs f.e.t.. Electron. Lett. , 104 - 105
    2. 2)
      • Drukier, I.: `Medium power J-band MESFETs', Conference on active semiconductor devices for microwaves and integrated optics, 1975, Cornell University, .
    3. 3)
      • R.L. Camisa . GaAs MESFET linear amplifiers. ISSCC Digest of Technical Papers , 70 - 71
    4. 4)
      • R.L. Camisa , J. Goel , I. Druckier . GaAs m.e.s.f.e.t. linear power amplifier stage giving I W. Electron. Lett. , 572 - 573

Related content

An Erratum has been published for this content:
Erratum: 7.9–8.4 GHz GaAs m.e.s.f.e.t. amplifier
This is a required field
Please enter a valid email address