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Performance of selenium-ion-implanted GaAs f.e.t.s

Performance of selenium-ion-implanted GaAs f.e.t.s

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© The Institution of Electrical Engineers
Published

Selenium-ion-implanted GaAs f.e.t.s have given minimum noise figures as low as 3·4 dB and maximum available gains of at least 10 dB at 10 GHz. The devices do not appear to suffer from short-term drift problems, and have greater device-characteristic uniformity and reproducibility than epitaxial f.e.t.s.

Inspec keywords: semiconductor device manufacture; field effect transistors; ion implantation; semiconductor doping; solid-state microwave devices

Other keywords: minimum noise figures; field effect transistors; maximum available gains; Se ion implantation; 10 GHz; GaAs FET's

Subjects: Semiconductor doping; Other field effect devices; Semiconductor industry

References

    1. 1)
      • J.A. Higgins , B.M. Welch , F.H. Eisen , G.D. Robinson . Performance of sulphur-ion-implanted GaAs f.e.t.s. Electron. Lett. , 17 - 18
    2. 2)
      • Dilorenzo, J.V.: WOCSEMAD, San Diego, Calif., 1976, unpublished discussions, sponsored by IEEE.
    3. 3)
      • R.G. Hunsperger , N. Hirsch . GaAs field-effect transistor with ion-implanted channels. Electron. Lett. , 577 - 578
    4. 4)
      • S.P. Emmons , D.D. Buss . J. Appl. Phys.. J. Appl. Phys.
    5. 5)
      • R. Hunsperger , N. Hirsch . Solid-State Electron. Solid-State Electron
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