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Performance of selenium-ion-implanted GaAs f.e.t.s

Performance of selenium-ion-implanted GaAs f.e.t.s

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Selenium-ion-implanted GaAs f.e.t.s have given minimum noise figures as low as 3·4 dB and maximum available gains of at least 10 dB at 10 GHz. The devices do not appear to suffer from short-term drift problems, and have greater device-characteristic uniformity and reproducibility than epitaxial f.e.t.s.

References

    1. 1)
      • R.G. Hunsperger , N. Hirsch . GaAs field-effect transistor with ion-implanted channels. Electron. Lett. , 577 - 578
    2. 2)
      • S.P. Emmons , D.D. Buss . J. Appl. Phys.. J. Appl. Phys.
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      • R. Hunsperger , N. Hirsch . Solid-State Electron. Solid-State Electron
    4. 4)
      • J.A. Higgins , B.M. Welch , F.H. Eisen , G.D. Robinson . Performance of sulphur-ion-implanted GaAs f.e.t.s. Electron. Lett. , 17 - 18
    5. 5)
      • Dilorenzo, J.V.: WOCSEMAD, San Diego, Calif., 1976, unpublished discussions, sponsored by IEEE.
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