© The Institution of Electrical Engineers
GaAs field-effect transistors without a mesa structure have been fabricated by selective sulphur-ion implantation into Cr-doped GaAs substrates. The transconductance was 16 mS and the maximum oscillation frequency was 30 GHz.
References
-
-
1)
-
T. Mizutani ,
K. Kurumada
.
GaAs planar Gunn digital devices by sulphur-ion implantation.
Electron. Lett.
,
638 -
639
-
2)
-
J.A. Higgins ,
B.M. Welch ,
F.H. Eisen ,
G.D. Robinson
.
Performance of sulphur-ion-implantated GaAs f.e.t.s.
Electron. Lett.
,
17 -
18
-
3)
-
R.G. Hunsperger ,
N. Hirsch
.
GaAs field-effect transistors with ion-implanted channels.
Electron. Lett.
,
577 -
578
-
4)
-
B.M. Welch ,
F.H. Eisln ,
J.A. Higgins
.
Gallium arsenide field-effect transistors by ion implantation.
J. Appl. Phys.
,
3685 -
3687
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19760328
Related content
content/journals/10.1049/el_19760328
pub_keyword,iet_inspecKeyword,pub_concept
6
6