GaAs field-effect transistors by selective sulphur-ion implantation

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GaAs field-effect transistors by selective sulphur-ion implantation

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© The Institution of Electrical Engineers
Published

GaAs field-effect transistors without a mesa structure have been fabricated by selective sulphur-ion implantation into Cr-doped GaAs substrates. The transconductance was 16 mS and the maximum oscillation frequency was 30 GHz.

Inspec keywords: solid-state microwave devices; field effect transistors; ion implantation; semiconductor device manufacture

Other keywords: field effect transistor; GaAs; 30 GHz; maximum oscillation frequency; transconductance; selective S ion implantation; FET

Subjects: Semiconductor industry; Other field effect devices; Semiconductor doping

References

    1. 1)
      • T. Mizutani , K. Kurumada . GaAs planar Gunn digital devices by sulphur-ion implantation. Electron. Lett. , 638 - 639
    2. 2)
      • J.A. Higgins , B.M. Welch , F.H. Eisen , G.D. Robinson . Performance of sulphur-ion-implantated GaAs f.e.t.s. Electron. Lett. , 17 - 18
    3. 3)
      • R.G. Hunsperger , N. Hirsch . GaAs field-effect transistors with ion-implanted channels. Electron. Lett. , 577 - 578
    4. 4)
      • B.M. Welch , F.H. Eisln , J.A. Higgins . Gallium arsenide field-effect transistors by ion implantation. J. Appl. Phys. , 3685 - 3687
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