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Inductive loading of the bias path in IMPATT-diode circuits

Inductive loading of the bias path in IMPATT-diode circuits

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It is shown that the addition of a large series inductance in the bias path of an IMPATT-diode circuit improves its low-frequency stability margin.

References

    1. 1)
      • C.A. Brackett . The elimination of tuning-induced burn-out and bias circuit oscillations in impatt oscillators. Bell Syst. Tech. J. , 271 - 306
    2. 2)
      • M.G. Reggiani , F.E. Marchetti . L'eliminazione delle oscil-lazioni spurie negli amplificatori e oscillatori a diodo impatt. Electron. Lett. , 539 - 540
    3. 3)
      • M.G. Reggiani . Low-frequency stability margin in impatt-diode circuits. Electron. Lett. , 234 - 235
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