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High-gain wide-gap-emitter Ga1-xAlxAs-GaAs phototransistor

High-gain wide-gap-emitter Ga1-xAlxAs-GaAs phototransistor

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A Ga1-xAlxAs-GaAs heterostructure phototransistor has been manufactured and tested. The device is an n-p-n structure employing the ‘wide-gap-emitter’ effect. High internal current gain (>2000) has been achieved.

References

    1. 1)
      • Shockley, W.: `Circuit element utilizing semiconductive material', 2569347, 1951, US Patent.
    2. 2)
      • Zh.I. Alferov , F.A. Akhmedov , V.I. Korol'kov , V.G. Nikitin . Phototransistor utilizing a GaAs-AlAs heterojunction. Sor. Phys. Semicond. , 780 - 782
    3. 3)
      • H. Kroemer . Theory of a wide-gap emitter for transistors. Proc. Inst. Radio Eng. , 1535 - 1537
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