Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

In situ in etching technique for l.p.e. InP

In situ in etching technique for l.p.e. InP

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

An in situ In etch technique is described for l.p.e. growth of InP. This method eliminates substrate ‘sensitivity’ to orientation difficulties and removes any need for melt supersaturation to obtain good morphology. In addition, in situ etching removes any substrate pitting or type conversion which degrades actual device performance.

Inspec keywords: epitaxial growth; III-V semiconductors; semiconductor growth; indium compounds; etching

Other keywords: InP epitaxy; In etch technique; in situ etching; liquid phase epitaxy

Subjects: Semiconductor technology; Epitaxial growth; Corrosion, oxidation, etching, and other surface treatments; Thin film growth, structure, and epitaxy; Methods of thin film deposition

References

    1. 1)
      • E. Bauser , M. Frik , K. Loechner , L. Schidt , R. Ulrich . Substrate orientation and surface morphology of GaAs liquid phase epitaxial layers. J. Crystal Growth , 148 - 153
    2. 2)
      • P.E.R. Nordquist , H. Lessoff , E.M. Swiggard . Liquid phase epitaxial growth of GaAs on an etched substrate. Mat. Res. Bull. , 8
    3. 3)
      • G. Stareev . A new methd for liquid phase epitaxy. J. Crystal Growth , 189 - 196
    4. 4)
      • Majerfeld, A., Moyes, N.: `Morphological characteristics of liquid epitaxial InP', Proceedings of 5th biennial Cornell electrical engineering conference, 1975, p. 145–155.
    5. 5)
      • H. Morkoc , L.F. Eastman . The controlled growth of submicron GaAs layers by liquid phase epitaxy for microwave field effect transistors. J. Electrochem. Soc. , 906 - 913
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19760302
Loading

Related content

content/journals/10.1049/el_19760302
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address