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In situ in etching technique for l.p.e. InP

In situ in etching technique for l.p.e. InP

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An in situ In etch technique is described for l.p.e. growth of InP. This method eliminates substrate ‘sensitivity’ to orientation difficulties and removes any need for melt supersaturation to obtain good morphology. In addition, in situ etching removes any substrate pitting or type conversion which degrades actual device performance.

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