Reduction of high-level nonlinear smearing in c.c.d.s.

Reduction of high-level nonlinear smearing in c.c.d.s.

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It is shown that the distortion caused by nonlinear smearing at high signal levels in charge-coupled devices may be vastly reduced by only using alternate signal inputs, followed by summation of the signals in adjacent cells at the output.


    1. 1)
      • K.K. Thornber . Operational limitations of charge transfer devices. Bell Syst. Tech. J. , 1453 - 1482
    2. 2)
      • A. Chowaniec , G.S. Hobson . Phase errors in transversal and recursive filters realised with charge-transfer devices. Electron. Lett. , 467 - 468
    3. 3)
      • IEEE J. Solid-State Circuits. IEEE J. Solid-State Circuits
    4. 4)
      • R.H. Brodersen , D.D. Buss , A.F. Tasch . Experimental characterization of transfer efficiency in charge-coupled devices. IEEE Trans. , 40 - 46
    5. 5)
      • G.F. Vanstone , J.B.G. Roberts , A.E. Long . The measurement of the charge residual for charge-coupled device transfer using impulse and frequency responses. Solid-State Electron. , 889 - 895

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