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Criterion for the optimum punchthrough factor of gallium-arsenide IMPATT diodes

Criterion for the optimum punchthrough factor of gallium-arsenide IMPATT diodes

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Simple theory predicts an optimum punchthrough factor of approximately 0.7 for gallium-arsenide IMPATTs. Computer-simulation results demonstrate good general agreement with the predictions of the theory.

References

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      • Blakey, P.A.: 1976, Ph.D. thesis, University of London, (in preparation).
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