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Collector-base capacitance of high frequency integrated bipolar transistors

Collector-base capacitance of high frequency integrated bipolar transistors

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A method of obtaining the correct emitter junction capacitance Cb'e from the measured device parameters is presented. This method is shown to apply to integrated bipolar transistors having fT ≃ 2.5 GHz.

References

    1. 1)
      • J.A. Archer . Design and performance of small-signal microwave transistors. Solid-State Electron. , 248 - 258
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