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O-band fast p-i-n-diode switch

O-band fast p-i-n-diode switch

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An O-band fast p-i-n-diode s.p.s.t. switch has been developed which has an insertion loss of ≤ 1.0 dB and an isolation of ≥ 25 dB over a 5% bandwidth. Switching speed is < 1 ns and estimated power handling is ≥ 1 W c.w. The unit is to be used as a modulator in a 60 GHz, 130 Mbit/s digital radio data link under development at RSRE, Malvern, England.

References

    1. 1)
      • R.V. Garver . Theory of TEM diode switching (mode 2 operation). IRE Trans. , 224 - 238
    2. 2)
      • W.J. Clemetson , N.D. Kenyon , K. Kurokawa , B. Owen , W.O. Schlosser . Bell. Syst. Tech. J.. Bell. Syst. Tech. J. , 2917 - 2945
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