Optoelectronic gating of microwave signals using a silicon microstrip shunt modulator

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Optoelectronic gating of microwave signals using a silicon microstrip shunt modulator

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© The Institution of Electrical Engineers
Published

A new silicon microstrip modulator for optoelectronic gating of microwave signals is described. Gating infrared pulses produces a small semiconductor region of high photoconductivity, which shunts the microstrip transmission line if special strip conductor structures are used. Theoretical and experimental results were found to agree fairly well.

Inspec keywords: optical modulation; strip line components; optoelectronic devices

Other keywords: microwave signals; Si microstrip shunt modulator; optoelectronic gating; microstrip transmission line; photoconductivity

Subjects: Optoelectronic materials and devices; Waveguide and microwave transmission line components

References

    1. 1)
      • A. Ambroziak . (1968) , Semiconductor photoelectric devices.
    2. 2)
      • Platte, W.: `Lichtempfindliche Halbleiterschichten in Microstrip-Schaltungen', 1975, Dissertation, Universität Erlangen-Nuernberg.
    3. 3)
      • W. Platte . Optimum gapwidth in light-controlled microstrip modulators. Electron. Lett. , 189 - 190
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