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Optoelectronic gating of microwave signals using a silicon microstrip shunt modulator

Optoelectronic gating of microwave signals using a silicon microstrip shunt modulator

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A new silicon microstrip modulator for optoelectronic gating of microwave signals is described. Gating infrared pulses produces a small semiconductor region of high photoconductivity, which shunts the microstrip transmission line if special strip conductor structures are used. Theoretical and experimental results were found to agree fairly well.

References

    1. 1)
      • Platte, W.: `Lichtempfindliche Halbleiterschichten in Microstrip-Schaltungen', 1975, Dissertation, Universität Erlangen-Nuernberg.
    2. 2)
      • A. Ambroziak . (1968) , Semiconductor photoelectric devices.
    3. 3)
      • W. Platte . Optimum gapwidth in light-controlled microstrip modulators. Electron. Lett. , 189 - 190
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