© The Institution of Electrical Engineers
A simple d.c. method is presented for the extraction of very shallow doping profiles in the depth range 0–200 nm in buried-channel transistors or c.c.d.s. The evaluation is free from complex corrections. Profile position and concentrations are determined with ± 5% accuracy.
References
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1)
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Hoefflinger, B., Gabler, L.: `Implantation profile and buried-channel depth in ion-implanted MIS structures', Proceedings of international conference on ion implantation in semiconductors, 1974, Osaka, Japan, p. 717–722.
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2)
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Hoefflinger, B.: `Electronics of ion-implanted MIS structures', Proceedings of workshop conference, electronics of compound semiconductor interfaces, 1974, Fort Collins, , p. 43–49.
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3)
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Schemmert, W., Gabler, L., Hoefflinger, B.: `Sub-threshold and active region characterization of ion-implanted buried-channel MOS transistors', International electron devices meeting, 1974, , p. 546–549, Technical Digest.
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