Measurement of the base diffusion profile of a narrow-basewidth transistor

Measurement of the base diffusion profile of a narrow-basewidth transistor

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A technique for routinely determining the intrinsic base diffusion profile in a narrow-basewidth transistor is described. The technique involves the fabrication of a novel Van der Pauw device and the subsequent measurement of the sheet resistance and Hall coefficient of the base region. Diffusion profiles measured in a shallow double-diffused arsenic-emitter boron-base transistor structure by this technique are reported.


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