GaAs power f.e.t.s with semi-insulated gates

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GaAs power f.e.t.s with semi-insulated gates

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© The Institution of Electrical Engineers
Published

GaAs semi-insulated-gate f.e.t.s (s.i.g.f.e.t.s) have been fabricated by Ar+ bombardment in the gate region. The d c. characteristics and microwave performance are compared with those of conventional power m.e.s.f.e.t.s fabricated from the same slice. Up to 2.9W output power with 4dB gain has been obtained from s.i.g.f.e.t. devices at 8 GHz.

Inspec keywords: ion implantation; power transistors; solid-state microwave devices; field effect transistors

Other keywords: Ar+ bombardment; ion implantation; microwave performance; DC characteristics; GaAs; semiinsulated gates; power FET

Subjects: Semiconductor doping; Solid-state microwave circuits and devices; Other field effect devices

References

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      • H.C. Huang , I. Drukier , R.L. Camisa , S.Y. Narayan , S.T. Jolly . High efficiency GaAs m.e.s.f.e.t. amplifiers. Electron Lett. , 508 - 509
    2. 2)
      • Macksey, H.M., Adams, R.L.: `Fabrication processes for GaAs power FET's', Proceedings of 5th Biennial Conference on Active Semiconductor Devices for Microwaves and Integrated Optics, 1975, Cornell University, p. 255–264.
    3. 3)
      • M. Fukuta , K. Suyama , H. Suzuki , Y. Nakayama , H. Ishikawa . X-band GaAs Schottky barrier power FET with a high drain-source breakdown voltage. ISSCC Digest of Technical Papers , 166 - 167
    4. 4)
      • B.R. Pruniaux , J.C. North , A.V. Payer . A semi-insulated gate gallium-arsenide field-effect transistor. IEEE Trans. , 672 - 674
    5. 5)
      • H.M. Macksey , R.L. Adams , D.N. Mcquiddy , W.R. Wisseman . X-band performance of GaAs power f.e.t.s.. Electron. Lett. , 54 - 56
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