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GaAs power f.e.t.s with semi-insulated gates

GaAs power f.e.t.s with semi-insulated gates

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GaAs semi-insulated-gate f.e.t.s (s.i.g.f.e.t.s) have been fabricated by Ar+ bombardment in the gate region. The d c. characteristics and microwave performance are compared with those of conventional power m.e.s.f.e.t.s fabricated from the same slice. Up to 2.9W output power with 4dB gain has been obtained from s.i.g.f.e.t. devices at 8 GHz.

References

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      • H.C. Huang , I. Drukier , R.L. Camisa , S.Y. Narayan , S.T. Jolly . High efficiency GaAs m.e.s.f.e.t. amplifiers. Electron Lett. , 508 - 509
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      • M. Fukuta , K. Suyama , H. Suzuki , Y. Nakayama , H. Ishikawa . X-band GaAs Schottky barrier power FET with a high drain-source breakdown voltage. ISSCC Digest of Technical Papers , 166 - 167
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      • H.M. Macksey , R.L. Adams , D.N. Mcquiddy , W.R. Wisseman . X-band performance of GaAs power f.e.t.s.. Electron. Lett. , 54 - 56
    5. 5)
      • Macksey, H.M., Adams, R.L.: `Fabrication processes for GaAs power FET's', Proceedings of 5th Biennial Conference on Active Semiconductor Devices for Microwaves and Integrated Optics, 1975, Cornell University, p. 255–264.
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